F-III Series Features High Current On-Resistance Secondary B
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2SK1508
F-III Series
Features
High Current On-Resistance Secondary Breakdown Driving Power High Forward Transconductance
N-channel MOS-FET
0,035
Outline Drawing
Applications
Motor Control General Purpose Power Amplifier DC-DC converters
Maximum Ratings Characteristics
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating Storage Temperature Range Symbol D(puls) Rating +150 Unit
Equivalent Circuit
Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol (BR)DSS GS(th)
DS(on)
d(on) d(off)
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=17,5A VGS=4V ID=17,5A VGS=10V ID=17,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=10A VGS=35V RGS=25 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
Min.
Typ. 0,037 0,025 1800 1,35
Max. 0,056 0,035 2700
Unit
Thermal Characteristics Item Thermal Resistance
Symbol th(ch-a) th(ch-c)
Test conditions channel channel case
Min.
Typ.
Max. 2,08
Unit °C/W °C/W
Fuji Semiconductor, Inc. P.O. 702708 Dallas, 75370 972-733-1700 www.fujisemiconductor.com
FUJI ELECTRIC GmbH; Lyoner D-60528 Frankfurt; Tel: 069-66 29-0; Fax: 069-66 29-56
N-channel MOS-FET
0,035
2SK1508
F-III Series
Drain-Source-On-State Resistance Typical Transfer Characteristics
Characteristics
Typical Output Characteristics
RDS(ON)
[°C]
Typical
Typical Forward Transconductance
Gate Threshold Voltage
RDS(ON)
VGS(th)
[°C]
Typical Capacitance
Typical Input Charge
Forward Characteristics Reverse Diode
[nF]
[nC]
Allowable Power Dissipation
Safe operation area
Transient Thermal Impedance
Zth(ch-c) [K/W]
[°C]
This specification subject change without notice!
Fuji Semiconductor, Inc. P.O. 702708 Dallas, 75370 972-733-1700 www.fujisemiconductor.com
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