HN62444N Series 262144-word 16-bit/524288-word 8-bit CMOS Mask Pr

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HN62444N Series 262144-word 16-bit/524288-word 8-bit CMOS Mask Pr

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ADE-203-401A(Z)
HN62444N Series
262144-word 16-bit/524288-word 8-bit CMOS Mask Programmable
Rev. Jun. 1995
HN62444N 4-Mbit CMOS maskprogrammable organized either 262144 words bits 524288 words bits. Realizing power consumption, this memory allowed battery operation. high speed access 100/120 (max) most suitable system using high speed micro-computer bits.
Ordering Information
Type HN62444NP-10 HN62444NP-12 HN62444NF-10 HN62444NF-12 Access time Package 40-pin plastic (DP-40) 48-pin plastic (FP-48DA)
Features
Single power supply High speed Normal access time: 100/120 (max) Page access time: 50/60 (max) power consumption Active: (max) Standby: (max) Byte-wide word-wide data organization with word page access word-wide mode byte page access byte-wide mode Wired permitted output three status compatible compatible with Mbit EPROM (HN27C4000G)
HN62444N Series
Arrangement
HN62444NP Series HN62444NF Series D15/A-1 D15/A-1
(Top View)
(Top View)
Description
name A-1, Function Address inputs Page address inputs 8/16 (byte/word) mode switch Data outputs Chip enable Output enable connection Power Ground
HN62444N Series
Block Diagram
Decoder Memory Array
Address Buffer Decoder Gates
Page Decoder
(A-1) Byte 3-state output buffer 16-bit (D15 8-bit D15/(D7)
Note: least significant address. When 'low', goes high impedance state, should A-1.
Mode Selection
Data output Mode Standby Output disable Read (16-bit) Read (8-bit) Read (8-bit) D15/A-1 Dout D0-D7 High-Z*2 High-Z D8-D15 High-Z High-Z Address input
High-Z High-Z
notes: Don't care. High-Z: High impedance
HN62444N Series
Absolute Maximum Ratings
Parameter Supply voltage*1 voltage*1 Symbol Vin, Vout Topr Tstg Tbias Value -0.3 +7.0 -0.3 +125 Unit
input output
Operating temperature range Storage temperature range Temperature under bias Note: With respect VSS.
Recommended Operating Conditions +70°C)
Parameter Supply voltage Symbol Input voltage -0.3 0.45 Unit
Characteristics (VCC 10%, +70°C)
Parameter Supply current Active Standby Symbol ISB1 ISB2 Input leakage current Output leakage current Output voltage |ILI| |ILO| Unit Test conditions IDout 100/120 Vout -205 120/100
Capacitance (VCC 10%, +25°C, MHz)
Parameter Input capacitance*1 Output capacitance*1 Note: Symbol Cout Unit
This parameter sampled 100% tested.
HN62444N Series
Characteristics (VCC 10%, 70°C)
Output load: 1TTL (including jig) Input pulse level: 0.45 Input output timing reference level: Input rise fall time:
HN62444N-10 Parameter Read cycle time Page read cycle time Address access Page address access time access time access time access time Output hold time from address change Output hold time from Output hold time from Output hold time from output high-Z output high-Z output high-Z output low-Z output low-Z output low-Z Note: Symbol tACE tBHE tDHA tDHC tDHO tDHB tCHZ tOHZ tBHZ tCHZ tOLZ tBLZ HN62444N-12 Unit Note
tCHZ, tOHZ tBHZ defined time which output achieves open circuit conditions referred output voltage levels.
HN62444N Series
Timing Waveform
Word Mode (BHE `VIH') Byte Mode (BHE `VIL')
Address Dout High-Z Valid data High-Z
Note: tDHA, DHC, tDHO: Determined faster. tACE tOE: Determined slower. Determined slower.
Word Mode, Byte Mode Switch
High-Z
High-Z
Valid data
Valid data
High-Z
Valid data
Notes: enable, valid. D15/A-1 output state when high, enable. Therefore, input signals opposite phase output must applied them.
HN62444N Series
Page Mode
(A-1)
Dout
Valid data
Valid data
Valid data
Valid data
Notes: Page address determined below. Word mode (BHE 'High'): Byte mode (BHE 'Low'): A-1, enable.
HN62444N Series
Package Dimensions
HN62444NP Series (DP-40) Unit:
52.8 53.8
13.4 14.6 2.54 5.08
15.24
0.51
2.54 0.25
0.48 0.10
0.25 0.05
0.11
HN62444NF Series (FP-48DA)
20.4
Unit:
0.17 0.05
15.6
0.80
0.10 0.35 0.10 0.15

HN62444N Series 262144-word 16-bit/524288-word 8-bit CMOS Mask Pr

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