µPD3734A 2660 PIXELS LINEAR IMAGE SENSOR µPD3734A high sensi

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µPD3734A 2660 PIXELS LINEAR IMAGE SENSOR µPD3734A high sensi

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INTEGRATED CIRCUIT
µPD3734A
2660 PIXELS LINEAR IMAGE SENSOR
µPD3734A high sensitivity (Charge Coupled Device) linear image sensor which changes optical images electrical signal. µPD3734A 2660 pixels output amplifier which high gain wide output range, noise. reset feed-through level clamp circuit, sample hold circuit voltage amplifier. Therefore, suitable image scanners, facsimiles
FEATURES
Valid photocell Photocell's pitch High sensitivity Resolution Power supply Drive clock level High speed scan Built-in circuit 2660 pixels TYP. dot/mm CMOS output under operation 0.54 ms/line (S/H used) Sample hold circuit Reset feed-through level clamp circuit Clamp pulse generation circuit Voltage amplifier noise image MAX. (210 size (shorter side)
Peak response wavelength (green) letter (8.5" 11") size (shorter side)
ORDERING INFORMATION
Part Number Package linear image sensor 22-pin plastic (10.16 (400))
µPD3734ACY
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document S11454EJ2V0DS00 (2nd edition) Date Published October 2002 Printed Japan
mark
shows major revised points.
1996
µPD3734A
BLOCK DIAGRAM
AGND
VOUT
Voltage Amplifier circuit Reset feed-through level clamp circuit
Optical black (OB) pixels, invalid pixels, valid photocell 2660 pixels, invalid pixels
AGND
Data Sheet S11454EJ2V0DS
µPD3734A
CONFIGURATION (Top View)
linear image sensor 22-pin plastic (10.16 (400))
connection
connection
Sample hold clock
Reset gate clock
Output drain voltage
connection
Analog
AGND
connection
connection
VOUT
connection
connection
Output
connection
connection
connection
Shift register clock
Transfer gate clock
Shift register clock
Analog
AGND
connection
connection
connection
Caution Connect connection pins (NC) GND.
PHOTOCELL STRUCTURE DIAGRAM
Channel stopper
Aluminum shield
Data Sheet S11454EJ2V0DS
µPD3734A
ABSOLUTE MAXIMUM RATINGS +25°C)
Parameter Output drain voltage Shift register clock voltage Reset gate clock voltage Transfer gate clock voltage Sample hold clock voltage Operating ambient temperatureNote VSHB Tstg Symbol Ratings -0.3 -0.3 -0.3 -0.3 -0.3 Unit
Storage temperature
Note condition without condensation. Caution Product quality suffer absolute maximum rating exceeded even momentarily parameter. That absolute maximum ratings rated values which product verge suffering physical damage, therefore product must used under conditions that ensure that absolute maximum ratings exceeded.
RECOMMENDED OPERATING CONDITIONS +25°C)
Parameter Output drain voltage Shift register clock high level Shift register clock level Reset gate clock high level Reset gate clock level Transfer gate clock high level Transfer gate clock level Sample hold clock high level Sample hold clock level Data rate Symbol V1H, V1L, VRBH VRBL VTGH VTGL VSHBH VSHBL used used Conditions MIN. 11.4 -0.3 -0.3 -0.3 -0.3 TYP. 12.0 MAX. 12.6 +0.5 +0.5 +0.5 +0.5 Unit
Data Sheet S11454EJ2V0DS
µPD3734A
ELECTRICAL CHARACTERISTICS
+25°C, MHz, data rate MHz, storage time light source: 3200 halogen lamp C-500S (infrared filter, mm), input signal clock Vp-p
Parameter Saturation voltage Saturation exposure Photo response non-uniformity Average dark signal Dark signal non-uniformity Power consumption Output impedance Response Response peak Image Offset level Output fall delay timeNote RFSN SHSN VOUT 30ns VOUT VOUT data rate Vsat/DSNU Light shielding Light shielding, series resistor VOUT Symbol Vsat PRNU DSNU Daylight color fluorescent lamp Daylight color fluorescent lamp VOUT Light shielding Light shielding Test Conditions MIN. -900 TYP. 0.029 -200 MAX. +500 Unit times
Register imbalance Total transfer efficiency Dynamic range Reset feed-through noise Sample hold noise
noise Random noise
used used
mVp-p
Resolution
Modulation transfer function nyquist frequency
Note Refer TIMING CHART2.
Data Sheet S11454EJ2V0DS
µPD3734A
INPUT CAPACITANCE +25°C,
Parameter Shift register clock capacitance Shift register clock capacitance Sample hold clock capacitance Reset gate clock capacitance Transfer gate clock capacitance Symbol CSHB name MIN. TYP. MAX. Unit
Data Sheet S11454EJ2V0DS
µPD3734A
TIMING CHART
1346
1347
VOUT
VOUT (S/H)
(Optical black) pixels Invalid photocell pixels
Valid photocell 2660 pixels Invalid photocell pixels
Remark VOUT Output when used (When used, connect GND). VOUT (S/H) Output when used.
2691 2692 2693 2694 2695 2696
1348
Data Sheet S11454EJ2V0DS
µPD3734A
TIMING CHART
VOUT
RFSN
VOUT (S/H)
Signal
Sampling noise
Remark VOUT (S/H) Output when used.
Parameter t10, MIN. TYP. MAX. (100) Unit
Remark MAX. table above shows operation range which output characteristics kept almost enough general purpose, does show limit above which
µPD3734A destroyed.
Data Sheet S11454EJ2V0DS
µPD3734A
TIMING CHART
Parameter t14, t17,
MIN.
TYP. 1000
MAX. (2000)
Unit
Remark MAX. table above shows operation range which output characteristics kept almost enough general purpose, does show limit above which
µPD3734A destroyed.
CROSS POINTS
more
more
Remark Adjust cross point external input resistors.
Data Sheet S11454EJ2V0DS
µPD3734A
DEFINITIONS CHARACTERISTIC ITEMS
Saturation voltage: Vsat Output signal voltage which response linearity lost. Saturation exposure: Product intensity illumination (lx) storage time when saturation output voltage occurs. Photo response non-uniformity: PRNU peak/bottom ratio average output voltage valid pixels calculated following formula.
VMAX. VMIN.
PRNU
Number valid pixels Output voltage each pixel
VMIN. Register Dark level VMAX.
Average dark signal: Average output signal voltage valid pixels light shielding. This calculated following formula.
2660
(mV)
2660
Dark signal valid pixel number Dark signal non-uniformity: DSNU Absolute maximum difference between voltage highest lowest output pixel valid pixels light shielding. This calculated following formula. DSNU (mV): maximum
2660
Dark signal valid pixel number
Vout Register Dark level DSNU
Data Sheet S11454EJ2V0DS
µPD3734A
Output impedance: Output impedance viewed from outside. Response: Output voltage divided exposure Note that response varies with light source (spectral characteristic). Image Lag: rate between last output voltage next after read data line.
Light
VOUT VOUT
VOUT
Register Imbalance: rate difference between average output voltage Even pixels, against average output voltage valid pixels.
Number valid pixels Output voltage each pixel
Noise: Output signal distribution photocell scan.
Data Sheet S11454EJ2V0DS
µPD3734A
Random noise: Random noise defined standard deviation valid photocell output signal with times lines) data sampling dark (light shielding).
(mV)
valid photocell output signal among valid photocells
VOUT
line line
V100
line
This measured level sampling only signal level, (Correlated Double Sampling).
Data Sheet S11454EJ2V0DS
µPD3734A
STANDARD CHARACTERISTIC CURVES (Reference Value)
DARK OUTPUT TEMPERATURE CHARACTERISTIC
STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC +25°C)
Relative Output Voltage
Relative Output Voltage
Storage Time (ms) TOTAL SPECTRAL RESPONSE CHARACTERISTICS (without infrared filter) +25°C) Wavelength (nm) 1000 1200
0.25
Operating Ambient Temperature (°C)
Response Ratio
Data Sheet S11454EJ2V0DS
µPD3734A
APPLICATION CIRCUIT EXAMPLE
74HC04
AGND
VOUT
PD3734A
VOUT
AGND
Caution Connect connection pins (NC) GND. Remark When internal sample hold circuit µPD3734A necessary, connect (SHB) GND.
Data Sheet S11454EJ2V0DS
µPD3734A
PACKAGE DIMENSIONS
PD3734ACY LINEAR IMAGE SENSOR 22-PIN PLASTIC (10.16 (400)
(Unit
44.0±0.3 valid pixel 0.8±0.3
9.25±0.3
37.5
10.16±0.2
1.02±0.15
4.39±0.4
(1.99)
2.35±0.2 0.46±0.1 2.54±0.25 (5.42) 4.21±0.5
0.25±0.05 10.16 +0.7 -0.2
Name Plastic
Dimensions
Refractive index
valid pixel center pin1 surface chip bottom package surface chip
22C-1CCD-PKG16-1
Data Sheet S11454EJ2V0DS
µPD3734A
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, highly recommended observe conditions shown below. other soldering processes used, soldering performed under different conditions, please make sure consult with sales offices. Type Through-hole Device
µPD3734ACY: linear image sensor 22-pin plastic (10.16 (400))
Process Partial heating method Conditions temperature: below, Heat time: seconds less (per each lead).
Cautions During assembly care should taken prevent solder flux from contacting plastic cap. optical characteristics could degraded such contact. Soldering solder flow method have deleterious effects prevention plastic soiling heat resistance. method cannot guaranteed.
Data Sheet S11454EJ2V0DS
µPD3734A
NOTES HANDLING PACKAGES
DUST DIRT PROTECTING
optical characteristics will degraded scratched during cleaning. Don't either touch plastic surface hand have object come contact with plastic surface. Should dirt stick plastic surface, blow with blower. dirt stuck through electricity ionized recommended. plastic surface grease stained, clean with recommended solvents.
CLEANING PLASTIC
Care should taken when cleaning surface prevent scratches. recommend cleaning with soft cloth moistened with recommended solvents below. Excessive pressure should applied during cleaning. requires multiple cleanings recommended that clean surface cloth used.
RECOMMENDED SOLVENTS
following recommended solvents cleaning plastic cap. solvents other than these could result optical physical degradation plastic cap. Please consult your sales office when considering alternative solvent. Solvents Ethyl Alcohol Methyl Alcohol Isopropyl Alcohol N-methyl Pyrrolidone Symbol EtOH MeOH
MOUNTING PACKAGE
application excessive load package cause package warp break, cause chips come internally. Particular care should taken when mounting package circuit board. Don't have object come contact with plastic cap. should reform lead frame. recommended IC-inserter when assemble PCB. Also, care that following cause package crack dust generated. Applying heat external leads extended period time with soldering iron. Applying repetitive bending stress external leads. Rapid cooling heating
OPERATE STORAGE ENVIRONMENTS
Operate clean environments. image sensors precise optical equipment that should subject mechanical shocks. Exposure high temperatures humidity will affect characteristics. avoid storage usage such conditions. Keep case protect from dust dirt. condensation occur image sensors when devices transported from low-temperature environment high-temperature environment. Avoid such rapid temperature changes. more details, refer document "Review Quality Reliability Handbook" (C12769E)
ELECTROSTATIC BREAKDOWN
image sensor protected against static electricity, destruction static electricity sometimes detected. Before handling sure take following protective measures. Ground tools such soldering iron, radio cutting pliers pincer. Install conductive floor working table prevent generation static electricity. Either handle bare handed non-chargeable gloves, clothes material. Ionized recommended discharge when handling image sensor. shipment mounted substrates, treated prevention static charges. Anyone handling image sensors, mounting them PCBs testing inspecting PCBs which image sensors have been mounted must wear anti-static bands such wrist straps ankle straps which grounded series resistance connection about
Data Sheet S11454EJ2V0DS
µPD3734A
[MEMO]
Data Sheet S11454EJ2V0DS
µPD3734A
NOTES CMOS DEVICES
PRECAUTION AGAINST SEMICONDUCTORS Note: Strong electric field, when exposed device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred. Environmental control must adequate. When dry, humidifier should used. recommended avoid using insulators that easily build static electricity. Semiconductor devices must stored transported anti-static container, static shielding conductive material. test measurement tools including work bench floor should grounded. operator should grounded using wrist strap. Semiconductor devices must touched with bare hands. Similar precautions need taken boards with semiconductor devices HANDLING UNUSED INPUT PINS CMOS Note: connection CMOS device inputs cause malfunction. connection provided input pins, possible that internal input level generated noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar NMOS devices. Input levels CMOS devices must fixed high using pull-up pull-down circuitry. Each unused should connected with resistor, considered have possibility being output pin. handling related unused pins must judged device device related specifications governing devices. STATUS BEFORE INITIALIZATION DEVICES Note: Power-on does necessarily define initial status device. Production process does define initial operation status device. Immediately after power source turned devices with reset function have been initialized. Hence, power-on does guarantee out-pin levels, settings contents registers. Device initialized until reset signal received. Reset operation must executed immediately after power-on devices having reset function.
Data Sheet S11454EJ2V0DS
µPD3734A
information this document current September, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPD3734A 2660 PIXELS LINEAR IMAGE SENSOR µPD3734A high sensi

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