Silicon Darlington Power Transistor 2SB1647 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1647
DESCRIPTION Breakdown Voltage: V(BR)CEO= -150V(Min) Current Gain: hFE= 5000( Min.) @(IC= -10A, VCE= -4V) Collector Saturation Voltage: VCE(sat)= -2.5V(Max)@ (IC= -10A, -10mA) Type 2SD2560
APPLICATIONS audio, series regulator general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain Output Capacitance Current-Gain-Bandwidth Product CONDITIONS -30mA -10A; -10mA -10A; -10mA VCB= -150V VEB= -5V; -10A VCE= VCB= -10V; ftest= 1MHz VCE= -12V 5000 -150
2SB1647
TYP.
UNIT
-2.5 -3.0 -100 -100
Switching Times tstg Turn-on Time Storage Time Fall Time VCC= -40V, -10A; IB1= -IB2= -10mA,
Classifications 5000-12000 6500-20000 15000-30000
Websitewww.iscsemi.cn
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