Silicon Darlington Power Transistor 2SB1567 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1567
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 1000(Min)@ (VCE= -2V, -1A) Type 2SD2398
APPLICATIONS high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
-100
-100
UNIT
Collector Current-Peak Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1567
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-5mA;
-100
V(BR)CBO
Collector-Base Breakdown Voltage
-50A;
-100
VCE(sat) ICBO
Collector-Emitter Saturation Voltage
-1A; -1mA
-1.5
Collector Cutoff Current
VCB= -100V;
IEBO
Emitter Cutoff Current
VEB= -7V;
-3.0
Current Gain
-1A; VCE=
Collector Output Capacitance
VCB= -10V; 1MHz
1000
10000
Websitewww.iscsemi.cn
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