Silicon Darlington Power Transistor 2SB1560 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1560
DESCRIPTION Current Gain: hFE= 5000(Min)@IC= Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= Type 2SD2390
APPLICATIONS audio, series regulator general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE -160 -150
UNIT
Collector Current-Continuous
Base Current- Continuous Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1560
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-30mA;
-150
VCE(sat)
Collector-Emitter Saturation Voltage
-7A; -7mA
-2.5
VBE(sat) ICBO
Base-Emitter Saturation Voltage
-7A; -7mA
-3.0
Collector Cutoff Current
VCB= -160V;
-100
IEBO
Emitter Cutoff Current
VEB= -5V;
-100
Current Gain
-7A; VCE=
Collector Output Capacitance
Current-Gain-Bandwidth Product
Switching Times
Turn-on Time
tstg
Storage Time
VCB= -10V; 1MHz
VCE= -12V
5000
30000
-7A; IB1= -IB2= -7mA, VCC= -70V,
Fall Time
Classifications 5000-12000
6500-20000
15000-30000
Websitewww.iscsemi.cn
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