Silicon Darlington Power Transistor 2SB1558 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1558
DESCRIPTION Current Gain: hFE= 5000(Min)@IC= Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= Type 2SD2387
APPLICATIONS power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE -140 -140 -0.1
UNIT
Collector Current-Continuous
Base Current- Continuous Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1558
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-50mA;
-140
VCE(sat)
Collector-Emitter Saturation Voltage
-7A; -7mA
-2.5
VBE(on) ICBO
Base-Emitter Voltage
-7A; VCE=
-3.0
Collector Cutoff Current
VCB= -140V;
-5.0
IEBO
Emitter Cutoff Current
VEB= -5V;
-5.0
hFE-1
Current Gain
-7A; VCE=
hFE-2
Current Gain
Collector Output Capacitance
Current-Gain-Bandwidth Product
hFE-1 Classifications 5000-12000
-12A; VCE=
VCB= -10V; 1MHz
-1A; VCE=
5000 2000
30000
9000-18000
15000-30000
Websitewww.iscsemi.cn
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