Silicon Darlington Power Transistor 2SB1551 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1551
DESCRIPTION Breakdown Voltage: V(BR)CEO= -80V(Min) Current Gain: hFE= 1000(Min)@ (VCE= -3V; -5A)
APPLICATIONS power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
Collector Current-Continuous
Collector Current-Pulse Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1551
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-5mA;
V(BR)CBO
Collector-Base Breakdown Voltage
-50A;
VCE(sat)
Collector-Emitter Saturation Voltage
-3A; -6mA
-1.5
ICBO
Collector Cutoff Current
VCB= -80V;
-100
IEBO
Emitter Cutoff Current
Current Gain
Output Capacitance
Current-Gain-Bandwidth Product
-5A; VCE= 1000 VCB= -10V; ftest= 1MHz 0.5A; VCE= -5V; ftest= 10MHz
VEB= -5V;
20000
Websitewww.iscsemi.cn
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