Silicon Darlington Power Transistor 2SB1495 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1495
DESCRIPTION Current Gain: hFE= 2000(Min)@ (VCE= -2V, -2A) Saturation Voltage: VCE(sat)= -1.5V(Max.)@IC= -1.5A Type 2SD2257
APPLICATIONS high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
-100
-100
UNIT -0.3
Collector Current-Pulse
Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain Current Gain CONDITIONS -10mA; -1.5A; -1.5mA
2SB1495
-100
TYP.
UNIT
-1.5 -2.0 -4.0 2000 2000
-1.5A; -1.5mA
VCB= -100V; VEB= -8V;
Switching Times Turn-on Time Storage Time Fall Time
tstg
-1A; VCE= -2A; VCE= -1.5A, IB1= -IB2= -1.5mA, -30V;
Websitewww.iscsemi.cn
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