Silicon Darlington Power Transistor 2SB1490 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1490
DESCRIPTION Current Gain: hFE= 5000(Min)@IC= Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= Type 2SD2250
APPLICATIONS power amplifier applications HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE -160 -140
UNIT
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation TC=25
Collector Power Dissipation Ta=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Current Gain Current Gain CONDITIONS -30mA; -6A; -6mA
2SB1490
-140
TYP.
UNIT
-2.5 -3.0 -100 -100 -100
-6A; -6mA
VCB= -160V; VCE= -140V;
Current-Gain-Bandwidth Product
Switching Times
tstg
Turn-on Time Storage Time Fall Time
VEB= -5V; -1A; VCE= 2000 -6A; VCE= 5000 -0.5A; VCE= -10V -6A; IB1= -IB2= -6mA, VCC= -50V
30000
hFE-2 Classifications 5000-15000
8000-30000
Websitewww.iscsemi.cn
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