Silicon Darlington Power Transistor 2SB1481 DESCRIPTION Brea

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Silicon Darlington Power Transistor 2SB1481 DESCRIPTION Brea

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Silicon Darlington Power Transistor
2SB1481
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 2000(Min)@ (VCE= -2V, -1.5A) Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -3A, -6mA) Type 2SD2241
APPLICATIONS power switching applications. drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
VALUE -100 -100 -0.3 -55~150
UNIT
Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Tstg Junction Temperature Storage Temperature
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1481
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-10mA;
-100
VCE(sat) VBE(sat) ICBO IEBO
Collector-Emitter Saturation Voltage
-3A; -6mA
-1.5
Base-Emitter Saturation Voltage
-3A; -6mA
-2.0
Collector Cutoff Current
VCB= -100V; VEB= -5V;
-2.0
Emitter Cutoff Current
-2.5
hFE-1
Current Gain
-1.5A; VCE=
hFE-2
Current Gain
VECF
Diode Forward Voltage
Switching Times
tstg
Turn-on Time
Storage Time
-3A; VCE=
2000 1000 0.15 0.80 0.40
-3A, IB1= -IB2= -6mA, -30V;
Fall Time
Websitewww.iscsemi.cn

Silicon Darlington Power Transistor 2SB1481 DESCRIPTION Brea

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