Silicon Darlington Power Transistor 2SB1478 DESCRIPTION Curr
|
|
|
Top Searches for this datasheet
Silicon Darlington Power Transistor
2SB1478
DESCRIPTION Current Gain: 2000(Min)@ Collector Saturation Voltage: VCE(sat) -2.0V(Max.) @IC= Type 2SD2237
APPLICATIONS power linear switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VALUE -100 -100
UNIT
VEBO
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1478
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-10mA,
-100
V(BR)CBO
Collector-Base Breakdown Voltage
-50A; IE=0
-100
V(BR)EBO
Emitter-Base Breakdown Voltage
-2mA; IC=0
VCE(sat)
Collector-Emitter Saturation Voltage
-5A, -20mA
-2.0
VBE(sat)
Base-Emitter Saturation Voltage
-5A, -20mA
ICBO
Collector Cutoff current
IEBO
Emitter Cutoff current
Current Gain
VCB= -100V, VEB= -5V, -2A; VCE=
2000
-2.5
20000
Websitewww.iscsemi.cn
Other recent searches
SD05 - SD05 SD05 Datasheet
PI3B32X245 - PI3B32X245 PI3B32X245 Datasheet
NJM4580 - NJM4580 NJM4580 Datasheet
NCP1402 - NCP1402 NCP1402 Datasheet
L4925 - L4925 L4925 Datasheet
K81A - K81A K81A Datasheet
FEDR27T3202F-02-04 - FEDR27T3202F-02-04 FEDR27T3202F-02-04 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
