Silicon Darlington Power Transistor 2SB1430 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1430
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 2000(Min)@ (VCE= -2V, -2A) Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, -2mA)
APPLICATIONS low-frequency power amplifiers lowspeed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
VALUE -100 -100 -0.5 -55~150
UNIT
Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Tstg Junction Temperature Storage Temperature
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1430
UNIT
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
-2A; -2mA
-1.5
Base-Emitter Saturation Voltage
-2A; -2mA
-2.0
Collector Cutoff Current
VCB= -100V;
-1.0
hFE-1 hFE-2
Current Gain
-2A; VCE= -4A; VCE=
2000
20000
Current Gain
Current-Gain-Bandwidth Product
-0.5A; VCE=
Output Capacitance
Switching Times
tstg
Turn-on Time
Storage Time
Fall Time
VCB= -10V; ftest= 1MHz
-2A, IB1= -IB2= -2mA, -50V;
hFE-1 Classifications 2000-5000 4000-10000 8000-20000
Websitewww.iscsemi.cn
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