Silicon Darlington Power Transistor 2SB1411 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1411
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 1500(Min)@ (VCE= -3V, -1A) Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -1A, -2mA)
APPLICATIONS power switching applications. drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
VALUE -100 -100 -0.5 -55~150
UNIT
Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Tstg Junction Temperature Storage Temperature
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1411
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-30mA;
-100
VCE(sat)-1 VCE(sat)-2 VBE(sat) ICBO
Collector-Emitter Saturation Voltage
-1A; -2mA
-1.5
Collector-Emitter Saturation Voltage
-2A; -8mA
-2.5
Base-Emitter Saturation Voltage
-1A; -2mA
-2.2
Collector Cutoff Current
VCB= -100V;
-100
IEBO
Emitter Cutoff Current
VEB= -6V;
hFE-1
Current Gain
hFE-2
Current Gain
Switching Times
tstg
Turn-on Time
Storage Time
-1A; VCE=
-2A; VCE=
1500 1000
-2.5
15000
-1A, IB1= -IB2= -2mA, -30V;
Fall Time
Websitewww.iscsemi.cn
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