Silicon Darlington Power Transistor 2SB1389 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1389
DESCRIPTION Breakdown Voltage: V(BR)CEO= -60V(Min) Current Gain: hFE= 1000(Min)@ (VCE= -3V, -2A)
APPLICATIONS frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
VALUE
UNIT
Collector Current-Peak Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1389
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-25mA; RBE=
V(BR)CBO
Collector-Base Breakdown Voltage
-0.1mA;
V(BR)EBO
Emitter-Base Breakdown Voltage
-50mA;
VCE(sat)-1
Collector-Emitter Saturation Voltage
-2A; -4mA
-1.5
VCE(sat)-2
Collector-Emitter Saturation Voltage
-4A; -40mA
-3.0
VBE(sat)-1
Base-Emitter Saturation Voltage
-2A; -4mA
VBE(sat)-2 ICBO
Base-Emitter Saturation Voltage
Collector Cutoff Current
ICEO
Collector Cutoff Current
Current Gain
VECF
Diode Forward Voltage
-4A; -40mA
VCB= -50V;
VCE= -50V; RBE=
1000
-2.0
-3.5
-2A; VCE=
20000
Websitewww.iscsemi.cn
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