Silicon Darlington Power Transistor 2SB1383 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1383
DESCRIPTION Current Gain hFE= 2000(Min.)@ -12A, VCE= Collector-Emitter Breakdown Voltage: V(BR)CEO -120V(Min) Type 2SD2083
APPLICATIONS driver solenoid, motor general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -120 -120 UNIT
Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff current Current Gain Output Capacitance Current-Gain-Bandwidth Product CONDITIONS -25mA ,IB= -12A ,IB= -24mA -12A ,IB= -24mA VCB= -120V, VEB= -6V, -12A VCE= VCB= -10V; ftest= 1MHz VCE= -12V 2000 -120
2SB1383
TYP.
UNIT
-1.8 -2.5
Switching Times tstg Turn-On Time Storage Time Fall Time -12A,IB1 -IB2= -24mA; VCC= -24V,
Websitewww.iscsemi.cn
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