Silicon Darlington Power Transistor 2SB1382 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1382
DESCRIPTION Breakdown Voltage: V(BR)CEO= -120V(Min) Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, -16mA) Type 2SD2082
APPLICATIONS chopper regulator, motor driver general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1382
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-10mA
-120
VCE(sat) VBE(sat) ICBO IEBO
Collector-Emitter Saturation Voltage
-8A; -16mA
-1.5
Base-Emitter Saturation Voltage
-8A; -16mA
-2.5
Collector Cutoff Current
VCB= -120V VEB= -6V;
Emitter Cutoff Current
Current Gain
VCE=
2000
Output Capacitance
VCB= -10V; ftest= 1MHz VCE= -12V
Current-Gain-Bandwidth Product
Switching Times tstg Turn-on Time VCC= -40V, -8A; IB1= -IB2= -16mA,
Storage Time
Fall Time
Websitewww.iscsemi.cn
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