Silicon Darlington Power Transistor 2SB1381 DESCRIPTION Brea

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Silicon Darlington Power Transistor 2SB1381 DESCRIPTION Brea

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Silicon Darlington Power Transistor
2SB1381
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 1500(Min)@ (VCE= -3V, -2.5A) Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2.5A, -5mA) Type 2SD2079
APPLICATIONS power switching applications. drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
VALUE -100 -100 -0.5 -55~150
UNIT
Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Tstg Junction Temperature Storage Temperature
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1381
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-30mA;
-100
VCE(sat)-1 VCE(sat)-2 VBE(sat) ICBO
Collector-Emitter Saturation Voltage
-2.5A; -5mA
-1.5
Collector-Emitter Saturation Voltage
-5A; -20mA
-3.0
Base-Emitter Saturation Voltage
-2.5A; -5mA
-2.5
Collector Cutoff Current
VCB= -100V;
-100
IEBO
Emitter Cutoff Current
VEB= -6V;
hFE-1
Current Gain
hFE-2
Current Gain
Switching Times
tstg
Turn-on Time
Storage Time
-2.5A; VCE=
-7A; VCE=
1500
-2.5
15000
-2.5A, IB1= -IB2= -5mA, -25V;
Fall Time
Websitewww.iscsemi.cn

Silicon Darlington Power Transistor 2SB1381 DESCRIPTION Brea

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