Silicon Darlington Power Transistor 2SB1344 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1344
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 1000(Min)@ (VCE= -3V, -2A) Type 2SD2025
APPLICATIONS power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE -100 -100
UNIT
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1344
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-5mA;
-100
V(BR)CBO
Collector-Base Breakdown Voltage
-50A;
-100
VCE(sat)
Collector-Emitter Saturation Voltage
-3A; -6mA
-1.5
ICBO
Collector Cutoff Current
VCB= -100V;
IEBO
Emitter Cutoff Current
VEB= -5V;
Current Gain
-2A; VCE=
Output Capacitance
Current-Gain-Bandwidth Product
VCB= -10V; ftest= 1MHz
0.5A; VCE= -5V; ftest= 10MHz
1000
20000
Websitewww.iscsemi.cn
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