Silicon Darlington Power Transistor 2SB1340 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1340
DESCRIPTION Breakdown Voltage: V(BR)CEO= -120V(Min) Current Gain: hFE= 2000(Min)@ (VCE= -3V, -2A) Type 2SD1889
APPLICATIONS power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) ICBO IEBO PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain Output Capacitance Current-Gain-Bandwidth Product CONDITIONS -5mA -50A -3A; -6mA
2SB1340
-120 -120
TYP.
UNIT
-1.5 -100 2000 20000
VCB= -120V VEB= -5V; VCE= VCB= -10V; ftest= 1MHz 0.5A VCE= -5V; ftest= 10MHz
Websitewww.iscsemi.cn
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