Silicon Darlington Power Transistor 2SB1286 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1286
DESCRIPTION Current Gain:hFE 1000(Min)@ Breakdown Voltage:V(BR)CEO -100V(Min) Collector-Emitter Saturation Voltage :VCE(sat) -1.5V(Max)@ Type 2SD1646
APPLICATIONS general purpose amplifier speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE -100 -100
UNIT
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1286
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-5mA,
-100
V(BR)CBO
Collector-Base Breakdown Voltage
-50A,
-100
VCE(sat)
Collector-Emitter Saturation Voltage
-1A; -1mA
-1.5
ICBO
Collector Cutoff Current
VCB= -100V;
IEBO
Emitter Cutoff Current
VEB= -7V;
Current Gain
-1A; VCE=
Output Capacitance
VCB= -10V; 1MHz
1000
10000
Websitewww.iscsemi.cn
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