Silicon Darlingtion Power Transistor 2SB1284 DESCRIPTION urr
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Silicon Darlingtion Power Transistor
2SB1284
DESCRIPTION urrent Gain: hFE= 1500(Min.)@IC= Sustaining Voltage: VCEO(SUS)= -100V(Min.) Collector Saturation Voltage VCE(sat)= -1.5V(Max)@IC= APPLICATIONS power switching applications. drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE -100
UNIT
Collector Current-Continuous Collector Current-Peak
-100 -0.8 -1.5 -55~150
Base Current-Continuous Base Current-Peak Total Power Dissipation TC=25 Junction Temperature Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance,Junction Case 3.57 UNIT
Websitewww.iscsemi.cn
Silicon Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1284
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
-5A; -10mA
-1.5
VBE(sat) ICBO
Base-Emitter Saturation Voltage
-5A; -10mA
-2.0
Collector Cutoff Current
VCB= -100V;
-100
ICEO
Collector Cutoff Current
VCE= -100V;
-100
IEBO
Emitter Cutoff Current
VEB= -7V;
Current Gain
-5A; VCE=
Current-Gain-Bandwidth Product
Switching times
Turn-on Time
tstg
Storage Time
Fall Time
-1A; VCE= -10V
1500
15000
-5A, IB1= -IB2= -10mA, VBB2=
Websitewww.iscsemi.cn
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