Silicon Darlington Power Transistor 2SB1257 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1257
DESCRIPTION Breakdown Voltage: V(BR)CEO= -60V(Min) Current Gain: hFE= 2000(Min)@IC= Type 2SD2014
APPLICATIONS solenoid, relay motor general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE UNIT
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1257
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-10mA;
VCE(sat)
Collector-Emitter Saturation Voltage
-3A; -6mA
-1.5
VBE(sat) ICBO
Base-Emitter Saturation Voltage
-3A; -6mA
-2.0
Collector Cutoff Current
VCB= -60V; IE=0
IEBO
Emitter Cutoff Current
VEB= -6V; IC=0
Current Gain
-3A; VCE=
Output Capacitance
Current-Gain-Bandwidth Product
Switching Times
Turn-on Time
tstg
Storage Time
IE=0; VCB= -10V; ftest= 1.0MHz
0.2A; VCE= -12V
2000
-3A; IB1= -IB2= -10mA, VCC= -30V,
Fall Time
Websitewww.iscsemi.cn
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