Silicon Darlington Power Transistor 2SB1255 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1255
DESCRIPTION Current Gain: hFE= 5000(Min)@IC= Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= Type 2SD1895
APPLICATIONS power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
-160 -140
UNIT
Collector Current-Peak Collector Power Dissipation TC=25
Collector Power Dissipation Ta=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1255
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-30mA;
-140
VCE(sat)
Collector-Emitter Saturation Voltage
-7A; -7mA
-2.5
VBE(sat) ICBO
Base-Emitter Saturation Voltage
-7A; -7mA
-3.0
Collector Cutoff Current
VCB= -160V;
-100
ICEO
Collector Cutoff Current
VCE= -140V;
-100
IEBO
Emitter Cutoff Current
VEB= -5V;
hFE-1
Current Gain
hFE-2
Current Gain
Current-Gain-Bandwidth Product
Switching Times
Turn-on Time
-1A; VCE=
-7A; VCE=
-0.5A; VCE= -10V
2000 5000
-100
30000
-7A; IB1= -IB2= -7mA, VCC= -50V,
tstg
Storage Time
Fall Time
hFE-2 Classifications 5000-15000 8000-30000
Websitewww.iscsemi.cn
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