Silicon Darlington Power Transistor 2SB1227 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1227
DESCRIPTION Current Gain: hFE= 1500(Min)@ (VCE= -3V, -2.5A) Current Capability Wide ASO. Type 2SD1829
APPLICATIONS control motor drivers, printer hammer drivers, constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
-110
-100
UNIT
Collector Current-Peak Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain Current-Gain-Bandwidth Product CONDITIONS -50mA; RBE= -5mA; -2.5A; -5mA
2SB1227
-100 -110
TYP.
UNIT
-1.5 -2.0 -100 -3.0
-2.5A; -5mA
VCB= -80V;
Switching Times
tstg
Turn-on Time Storage Time Fall Time
VEB= -5V; -2.5A; VCE= 1500 -2.5A; VCE= -2A, IB1= -IB2= -4mA, VCC= -50V;
Websitewww.iscsemi.cn
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