Silicon Darlington Power Transistor 2SB1194 DESCRIPTION Sust

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Silicon Darlington Power Transistor 2SB1194 DESCRIPTION Sust

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Silicon Darlington Power Transistor
2SB1194
DESCRIPTION Sustaining Voltage: VCEO(SUS)= -100V(Min) Current Gain: hFE= 1500(Min)@ (VCE= -3V, -3A) Type 2SD1633
APPLICATIONS power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
VALUE -100 -100 -0.5
UNIT
Collector Current-Peak
Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Current Gain CONDITIONS -0.2A;
2SB1194
-100
TYP.
UNIT
-3A; -3mA
-1.5 -2.0 -100 -100 10000
-3A; -3mA
VCB= -100V; VCE= -100V;
Switching Times Turn-on Time Storage Time Fall Time
tstg
VEB= -7V; -3A; VCE= 1500 -3A, IB1= -IB2= -3mA, VCC= -50V
Classifications 1500-6000
4000-10000
Websitewww.iscsemi.cn

Silicon Darlington Power Transistor 2SB1194 DESCRIPTION Sust

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