Silicon Darlington Power Transistor 2SB1101 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1101
DESCRIPTION Breakdown Voltage: V(BR)CEO= -60V(Min) Current Gain: hFE= 1000(Min)@ (VCE= -3V, -2A) Type 2SD1601
APPLICATIONS frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO VECF PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Current Gain CONDITIONS -25mA; RBE= -50mA; -2A; -4mA
2SB1101
TYP.
UNIT
-1.5 -3.0 -2.0 -3.5 -100 20000
-4A; -40mA
-2A; -4mA
Diode Forward Voltage
Switching Times
-4A; -40mA
VCB= -60V;
VCE= -50V; RBE= -2A; VCE=
1000
tstg
Turn-on Time Storage Time Fall Time -2A, IB1= -IB2= -4mA
Websitewww.iscsemi.cn
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