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isc Product Specification

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB1101
APPLICATIONS ·Designed for low frequency power amplifiers applications.
SYMBOL PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Storage Temperature
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
2SB1101
MIN -60 -7
C-E Diode Forward Voltage
Switching Times
.cn mi cse is
ton tstg tf
isc Websitewww.iscsemi.cn