Silicon Darlington Power Transistor 2SB1100 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1100
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 1000(Min)@ -10A Type 2SD1591
APPLICATIONS audio frequency power amplifier speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE -100 -100
UNIT
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Tstg Junction Temperature
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain CONDITIONS -10A; -25mA -10A; -25mA VCB= -100V VEB= -5V; -10A VCE= 1000 TYP.
2SB1100
-1.5 -2.0 30000
UNIT
VCE(sat) VBE(sat) ICBO IEBO
Switching Times Turn-on Time Storage Time Fall Time
tstg
Classifications 1000-3000
-50V, -10A; IB1= -IB2= -25mA,
8000-30000
2000-5000
4000-10000
Websitewww.iscsemi.cn
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