Silicon Darlington Power Transistor 2SB1087 DESCRIPTION Brea
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Silicon Darlington Power Transistor
2SB1087
DESCRIPTION Breakdown Voltage: V(BR)CEO= -100V(Min) Current Gain: hFE= 2000(Min)@ (VCE= -2V, -2A)
APPLICATIONS frequency power amplifiers speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
VALUE -100 -100 -0.5
UNIT
Collector Current-Peak
Base Current-Continuous Collector Power Dissipation @Ta=25
Collector Power Dissipation @TC=25 Junction Temperature
Tstg
Storage Temperature
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain Current Gain Output Capacitance Current-Gain-Bandwidth Product CONDITIONS -2A; -2mA
2SB1087
TYP.
-1.5 -2.0 -1.0
UNIT
VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2
-2A; -2mA
VCB= -100V VEB= -5V; -2A; VCE= -4A; VCE= 2000
20000
Switching Times
tstg
Turn-on Time Storage Time Fall Time
8000-20000
VCB= -10V; ftest= 1MHz -0.5A; VCE= -2A, IB1= -IB2= -2mA, 50V;
hFE-1 Classifications 2000-5000
4000-10000
Websitewww.iscsemi.cn
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