Silicon Darlington Power Transistor 2SB1079 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1079
DESCRIPTION Current Gain: 1000(Min)@ -10A Sustaining Voltage: VCEO(SUS) -100V(Min) Type 2SD1559
APPLICATIONS frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
VALUE -100 -100 -55~150
UNIT
Tstg
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Collector Cutoff current Current Gain CONDITIONS -200mA, RBE= -25mA, RBE= -0.1mA ,IE= -50mA ,IC= -10A ,IB= -20mA -20A ,IB= -200mA -10A ,IB= -20mA -20A ,IB= -200mA VCB= -100V, VCE= -80V, RBE= -10A VCE= 1000 -100 -100 -100 TYP.
2SB1079
UNIT
-2.0 -3.0 -2.5 -3.5 -0.1 -1.0
Switching Times tstg Turn-on Time -IB2 Storage Time
Websitewww.iscsemi.cn
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