Silicon Darlington Power Transistor 2SB883 DESCRIPTION Curre
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Silicon Darlington Power Transistor
2SB883
DESCRIPTION Current Gain: 2000(Min)@ Area Safe Operation Collector-Emitter Saturation Voltage: VCE(sat) -1.5V(Max)@ Type 2SD1193
APPLICATIONS motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS -50mA, RBE= TYP.
2SB883
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
-5mA,
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
-7A, -14mA
-1.5
Base-Emitter Saturation Voltage
-7A, -14mA
-2.0
Collector Cutoff Current
VCB= -40V,
-100
IEBO
Emitter Cutoff Current
VEB= -5V;
Current Gain
Current-Gain-Bandwidth Product
-7A; VCE=
-7A; VCE=
2000
Websitewww.iscsemi.cn
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