Silicon Darlington Power Transistor 2SB880 DESCRIPTION Curre

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Silicon Darlington Power Transistor 2SB880 DESCRIPTION Curre

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Silicon Darlington Power Transistor
2SB880
DESCRIPTION Current Gain: 2000(Min)@ Area Safe Operation Collector-Emitter Saturation Voltage: VCE(sat) -1.5V(Max)@ Type 2SD1190
APPLICATIONS motor drivers, printer hammer drivers, relay drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25
VALUE 1.75 -55~150
UNIT
Collector Power Dissipation Ta=25 Tstg Junction Temperature Storage Temperature Range
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS -50mA, RBE= TYP.
2SB880
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
-5mA,
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
-2A, -4mA
-1.5
Base-Emitter Saturation Voltage
-2A, -4mA
-2.0
Collector Cutoff Current
VCB= -40V,
-100
IEBO
Emitter Cutoff Current
VEB= -5V;
Current Gain
Current-Gain-Bandwidth Product
Switching times
tstg
Turn-on Time
Storage Time
-2A; VCE=
-2A; VCE=
2000
-20V -2A; IB1= -IB2= -4mA
Fall Time
Websitewww.iscsemi.cn

Silicon Darlington Power Transistor 2SB880 DESCRIPTION Curre

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