Silicon Darlington Power Transistor 2SB765 DESCRIPTION Curre
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Silicon Darlington Power Transistor
2SB765
DESCRIPTION Current Gain: 1000(Min)@ -1.5A Breakdown Voltage: V(BR)CEO -120V(Min) Collector-Emitter Saturation Voltage: VCE(sat) -1.5V(Max)@ -1.5A Type 2SD864
APPLICATIONS speed power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE -120 -120
UNIT
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS -25mA, RBE= TYP.
2SB765
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-120
V(BR)EBO
Emitter-Base Breakdown Voltage
-50mA
VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO
Collector-Emitter Saturation Voltage
-1.5A, -3mA
-1.5
Collector-Emitter Saturation Voltage
-3A, -30mA
-3.0
Base-Emitter Saturation Voltage
-1.5A, -3mA
-2.0
Base-Emitter Saturation Voltage
-3A, -30mA
Collector Cutoff Current
ICEO
Collector Cutoff Current
Current Gain
Switching times
tstg
Turn-on Time
VCB= -120V,
VCE= -100V, RBE=
-1.5A; VCE=
1000
-3.5
-100
20000
Storage Time
-1.5A; IB1= -IB2= -3mA
Fall Time
Websitewww.iscsemi.cn
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