Silicon Darlington Power Transistor 2SB677 DESCRIPTION Curre
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Silicon Darlington Power Transistor
2SB677
DESCRIPTION Current Gain: 2000(Min)@ Breakdown Voltage: V(BR)CEO -40V(Min) Collector-Emitter Saturation Voltage: VCE(sat) -1.5V(Max)@
APPLICATIONS applications. drive, pulse motor drive applications. amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
PARAMETER
VALUE
UNIT
VEBO
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB677
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-25mA,
VCE(sat) VBE(sat)) ICBO IEBO
Collector-Emitter Saturation Voltage
-2A, -4mA
-1.5
Base-Emitter Saturation Voltage
-2A, -4mA
-2.0
Collector Cutoff Current
VCB= -60V, VEB= -5V;
Emitter Cutoff Current
-2.5
hFE-1
Current Gain
-1A; VCE=
hFE-2
Current Gain
tstg
Turn-on Time
Storage Time
Fall Time
-3A; VCE=
2000 1000
0.30
VCC= -30V; IB1= -IB2= -6mA,
0.60
0.25
Websitewww.iscsemi.cn
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