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isc Product Specification

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB673
APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications.
SYMBOL PARAMETER VALUE UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Storage Temperature Range
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
2SB673
V(BR)CEO
Collector-Emitter Breakdown Voltage
VCE(sat)-1
Collector-Emitter Saturation Voltage
VCE(sat)-2
Collector-Emitter Saturation Voltage
VBE(sat) ICBO
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
Switching times s
Storage Time
Fall Time
isc Websitewww.iscsemi.cn