Silicon Darlington Power Transistor 2SB673 DESCRIPTION Curre
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Silicon Darlington Power Transistor
2SB673
DESCRIPTION Current Gain: 2000(Min)@ Breakdown Voltage: V(BR)CEO -100V(Min) Collector Saturation Voltage: VCE(sat) -1.5V(Max)@ Type 2SD633
APPLICATIONS power switching applications. drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-DC Collector Power Dissipation TC=25 Junction Temperature
-0.2
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB673
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-50mA,
-100
VCE(sat)-1
Collector-Emitter Saturation Voltage
,IB= -6mA
-1.5
VCE(sat)-2
Collector-Emitter Saturation Voltage
,IB= -14mA
-2.0
VBE(sat) ICBO
Base-Emitter Saturation Voltage
,IB= -6mA
-2.5
Collector Cutoff Current
VCB= -100V,
-100
IEBO
Emitter Cutoff Current
VEB= -5V;
hFE-1
Current Gain
VCE=
2000
15000
hFE-2
Current Gain
VCE=
1000
Switching times
Turn-on Time VCC= -45V IB1= -IB2= -6mA
tstg
Storage Time
Fall Time
Websitewww.iscsemi.cn
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