Silicon Darlington Power Transistor 2SB601 DESCRIPTION Curre

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Silicon Darlington Power Transistor 2SB601 DESCRIPTION Curre

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Silicon Darlington Power Transistor
2SB601
DESCRIPTION Current Gain: 2000(Min)@ Sustaining Voltage: VCEO(SUS) -100V(Min) Collector-Emitter Saturation Voltage: VCE(sat) -1.5V(Max)@
APPLICATIONS low-frequency power amplifiers lowspeed switching applications. direct drive from output magnet drivers such terminal equipment cash registers.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25 Collector Power Dissipation Ta=25 Junction Temperature Storage Temperature Range
VALUE -100 -100 -0.5
UNIT
-55~150
Tstg
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB601
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
-3A, IB1= -3mA,
-100
VCE(sat) VBE(sat) ICBO ICEX
Collector-Emitter Saturation Voltage
,IB= -3mA
-1.5
Base-Emitter Saturation Voltage
,IB= -3mA
-2.0
Collector Cutoff Current
VCB= -100V, VCE= -100V, VBE(off)= 1.5V TC=125 VEB= -5V;
-1.0
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
Current Gain
VCE=
2000
15000
hFE-2
Current Gain
VCE=
Switching times
tstg
Turn-on Time -50V -3A; IB1= -IB2= -3mA
Storage Time
Fall Time
hFE-1 Classifications 2000-5000 3000-7000 5000-15000
Websitewww.iscsemi.cn

Silicon Darlington Power Transistor 2SB601 DESCRIPTION Curre

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