Silicon Darlington Power Transistor 2SB1031 DESCRIPTION Curr
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Silicon Darlington Power Transistor
2SB1031
DESCRIPTION Current Gain: 1000(Min)@ Sustaining Voltage: VCEO(SUS) -100V(Min) Type 2SD1435
APPLICATIONS frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
VALUE -100 -100 -55~150
UNIT
Tstg
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Collector Cutoff current Current Gain CONDITIONS -200mA, RBE= -1mA, RBE= -50mA ,IB= -16mA -15A ,IB= -150mA ,IB= -16mA -100 -100 TYP.
2SB1031
UNIT
-2.0 -3.0
Switching Times tstg
-15A ,IB= -150mA VCB= -100V, VCE= -80V, RBE= VCE= -8A, -IB2 -16mA;
1000
-2.5 -3.5 -0.1 -1.0 20000
Turn-on Time Storage Time
Websitewww.iscsemi.cn
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