Silicon Darlington Power Transistor 2SB1024 DESCRIPTION Coll
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Silicon Darlington Power Transistor
2SB1024
DESCRIPTION Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@ Current Gain: hFE= 2000(Min)@ (VCE= -2V, -1A) Type 2SD1414
APPLICATIONS power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25 Collector Power Dissipation @TC=25 Tstg Junction Temperature Storage Temperature -55~150 VALUE -100 -0.3 UNIT
Websitewww.iscsemi.cn
Silicon Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain Current Gain CONDITIONS -10mA -3A; -6mA -3A; -6mA VCB= -100V; VEB= -5V; -1A; VCE= -3A; VCE= 2000 1000 TYP.
2SB1024
UNIT
-1.5 -2.0 -2.5
Switching Times Turn-on Time Storage Time Fall Time -30V, -3A; IB1= -IB2= -6mA, 0.15 0.80 0.40
tstg
Websitewww.iscsemi.cn
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