Silicon Darlingtion Power Transistor 2SB1023 DESCRIPTION urr
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Silicon Darlingtion Power Transistor
2SB1023
DESCRIPTION urrent Gain: hFE= 2000(Min.)@IC= Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= Linearity Type 2SD1413
APPLICATIONS applications. drive, pulse motor drive applications. amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
VALUE
-0.3
UNIT
Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation Ta=25
Collector Power Dissipation TC=25 Tstg Junction Temperature Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SB1023
TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-25mA;
VCE(sat)
Collector-Emitter Saturation Voltage
-2A; -4mA
-1.5
VBE(sat) ICBO
Base-Emitter Saturation Voltage
-2A; -4mA
-2.0
Collector Cutoff Current
VCB= -60V;
IEBO
Emitter Cutoff Current
VEB= -5V;
-2.5
hFE-1
Current Gain
-1A; VCE=
hFE-2
Current Gain
Switching Times
Turn-on Time
tstg
Storage Time
Fall Time
-3A; VCE=
2000 1000
IB1= -IB2= -6mA, VCC= -30V;
0.25
Websitewww.iscsemi.cn
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