Silicon Darlingtion Power Transistor 2SB1020 DESCRIPTION urr

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Silicon Darlingtion Power Transistor 2SB1020 DESCRIPTION urr

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Silicon Darlingtion Power Transistor
2SB1020
DESCRIPTION urrent Gain: hFE= 2000(Min.)@IC= Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= Linearity Type 2SD1415
APPLICATIONS power switching applications. drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
-100 -100 -0.2
UNIT
Collector Current-Continuous
Base Current-Continuous Collector Power Dissipation Ta=25
Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SB1020
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-50mA;
-100
VCE(sat)-1
Collector-Emitter Saturation Voltage
-3A; -6mA
-1.5
VCE(sat)-2
Collector-Emitter Saturation Voltage
-7A; -14mA
-2.0
VBE(sat) ICBO
Base-Emitter Saturation Voltage
-3A; -6mA
-2.5
Collector Cutoff Current
VCB= -100V;
-100
IEBO
Emitter Cutoff Current
VEB= -5V;
hFE-1
Current Gain
hFE-2
Current Gain
Switching Times
Turn-on Time
tstg
Storage Time
-3A; VCE=
-7A; VCE=
2000 1000
-4.0
15000
-3.0A ,IB1= -IB2= -6mA, -45V;
Fall Time
Websitewww.iscsemi.cn

Silicon Darlingtion Power Transistor 2SB1020 DESCRIPTION urr

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