Silicon Power Transistors 2SA1535/A DESCRIPTION Breakdown Vo
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Silicon Power Transistors
2SA1535/A
DESCRIPTION Breakdown Voltage: V(BR)CEO= -150V(Min) -2SA1535 -180V(Min) -2SA1535A Linearity Type 2SC3944/A
APPLICATIONS low-frequency driver high power amplification, optimum driver-stage output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER 2SA1535 VCBO Collector-Base Voltage 2SA1535A 2SA1535 VCEO Collector-Emitter Voltage 2SA1535A VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25 Collector Power Dissipation Ta=25 Junction Temperature Storage Temperature Range -180 -1.5 -55~150 -180 -150 VALUE -150 UNIT
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Websitewww.iscsemi.cn
Silicon Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1535/A
TYP.
UNIT
2SA1535 V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1535A -10A -50mA
-150 -180
V(BR)EBO
Emitter-Base Breakdown Voltage
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
-0.5A; -50mA
-2.0
Base-Emitter Saturation Voltage
-0.5A; -50mA
-2.0
Collector Cutoff Current
VCB= -150V
hFE-1
Current Gain
-150mA VCE= -10V
hFE-2
Current Gain
-0.5A VCE=
Output Capacitance
VCB= -10V;ftest= 1MHz -50mA;VCE= -10V;ftest= 10MHz
Current-Gain-Bandwidth Product
hFE-1 Classifications 90-155 130-220 185-330
Websitewww.iscsemi.cn
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