Silicon Power Transistors 2SA1386/A DESCRIPTION Breakdown Vo

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Silicon Power Transistors 2SA1386/A DESCRIPTION Breakdown Vo

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Silicon Power Transistors
2SA1386/A
DESCRIPTION Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1386 -180V(Min)-2SA1386A Linearity Type 2SC3519/A
APPLICATIONS audio general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
2SA1386 VCBO Collector-Base Voltage 2SA1386A
-160 -180
2SA1386 VCEO Collector-Emitter Voltage 2SA1386A
-160 -180
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER 2SA1386 V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1386A Collector-Emitter Saturation Voltage 2SA1386 ICBO Collector Cutoff Current 2SA1386A IEBO Emitter Cutoff Current Current Gain Output Capacitance Current-Gain-Bandwidth Product VCB= -180V; VEB= -5V; VCE= VCB= -10V;ftest= 1.0MHz VCE= -12V -5.0A; -0.5A
2SA1386/A
CONDITIONS
-160
TYP.
UNIT
-25mA -180 -2.0 -100
VCE(sat)
VCB= -160V;
-100 -100
Switching Times Turn-on Time Storage Time Fall Time -10A ,RL= IB1= -IB2= -1A,VCC= -40V
tstg
Classifications 50-100 70-140 90-180
Websitewww.iscsemi.cn

Silicon Power Transistors 2SA1386/A DESCRIPTION Breakdown Vo

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