Silicon Power Transistors 2SA1386/A DESCRIPTION Breakdown Vo

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Power Transistors 2SA1386/A DESCRIPTION Breakdown Vo

Datasheet Thumbnail

Top Searches for this datasheet

Silicon Power Transistors
2SA1386/A
DESCRIPTION Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1386 -180V(Min)-2SA1386A Linearity Type 2SC3519/A
APPLICATIONS audio general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
2SA1386 VCBO Collector-Base Voltage
VCEO
Collector-Emitter Voltage
2SA1386A 2SA1386 2SA1386A
-160 -180 -160 -180
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous Collector Power Dissipation TC=25 Junction Temperature
Tstg
Storage Temperature Range
-55~150
Websitewww.iscsemi.cn
Silicon Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER 2SA1386 V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1386A Collector-Emitter Saturation Voltage 2SA1386 ICBO Collector Cutoff Current 2SA1386A IEBO Emitter Cutoff Current Current Gain Output Capacitance VCB= -180V; VEB= -5V; -5.0A; -0.5A
2SA1386/A
CONDITIONS
-160
TYP.
UNIT
-25mA -180 -2.0 -100
VCE(sat)
VCB= -160V;
-100 -100
VCE=
Current-Gain-Bandwidth Product
Switching Times
tstg
Turn-on Time Storage Time Fall Time
90-180
VCB= -10V;ftest= 1.0MHz
VCE= -12V
-10A ,RL= IB1= -IB2= -1A,VCC= -40V
Classifications 50-100 70-140
Websitewww.iscsemi.cn

Silicon Power Transistors 2SA1386/A DESCRIPTION Breakdown Vo

Top Searches for this datasheet

Other recent searches