Silicon Power Transistors 2SA1306/A/B DESCRIPTION Linearity
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Silicon Power Transistors
2SA1306/A/B
DESCRIPTION Linearity Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 -180V(Min)-2SA1306A -200V(Min)-2SA1306B Type 2SC3298/A/B APPLICATIONS amplifier applications. stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER 2SA1306 VCBO Collector-Base Voltage 2SA1306A VALUE -160 UNIT
VCEO
Collector-Emitter Voltage
2SA1306B 2SA1306 2SA1306A 2SA1306B
-180 -200 -160 -180 -200 -1.5 -0.15 -55~150
VEBO
Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range
Tstg
Websitewww.iscsemi.cn
Silicon Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1306/A/B
TYP.
UNIT
2SA1306 Collector-Emitter Breakdown Voltage
-160
V(BR)CEO
2SA1306A
-10mA;
-180
2SA1306B
-200
VCE(sat)
Collector-Emitter Saturation Voltage
-500mA; -50mA
-1.5
VBE(on)
Base-Emitter Voltage
-500mA; VCE=
-1.0
ICBO
Collector Cutoff Current
VCB= -160V;
IEBO
Emitter Cutoff Current
Current Gain
Current-Gain-Bandwidth Product
Output Capacitance
VEB= -5V; IC=0
-100mA VCE=
-1.0
-1.0
-100mA VCE= -10V
VCB= -10V;ftest= 1.0MHz
Classifications 70-140 120-240
Websitewww.iscsemi.cn
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