Silicon Power Transistors 2SA1220/A DESCRIPTION Linearity Co
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Silicon Power Transistors
2SA1220/A
DESCRIPTION Linearity Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)-2SA1220 -160V(Min)-2SA1220A Type 2SC2690/A APPLICATIONS frequency power amplifier frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER 2SA1220 VCBO Collector-Base Voltage 2SA1220A 2SA1220 VCEO Collector-Emitter Voltage 2SA1220A VEBO
VALUE -120
UNIT
-160 -120 -160 -1.2 -2.5 -0.3 -55~150
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation Ta=25
Total Power Dissipation TC=25 Tstg Junction Temperature Storage Temperature Range
Websitewww.iscsemi.cn
Silicon Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1220/A
TYP.
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
-1A; -0.2A
-0.7
VBE(sat)
Base-Emitter Saturation Voltage
-1A; -0.2A
-1.3
ICBO
Collector Cutoff Current
VCB= -120V;
-1.0
IEBO
Emitter Cutoff Current
VEB= -3V; IC=0
-1.0
hFE-1
Current Gain
-5mA VCE=
hFE-2
Current Gain
-0.3A VCE=
Current-Gain-Bandwidth Product
-0.2A VCE=
Output Capacitance
VCB= -10V;ftest= 1.0MHz
hFE-2 Classifications 60-120 100-200 160-320
Websitewww.iscsemi.cn
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