45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These N-

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45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These N-

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RFP45N06LE, RF1S45N06LESM
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs manufactured using latest manufacturing process technology. This process, which uses feature sizes approaching those circuits, gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers, relay drivers. These transistors operated directly from integrated circuits. Formerly developmental type TA49177.
Features
45A, rDS(ON) 0.028 Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP45N06LE RF1S45N06LESM PACKAGE TO-220AB TO-263AB BRAND FP45N06L F45N06LE
Symbol
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel i.e., RF1S45N06LESM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE)
JEDEC TO-263AB
©2002 Fairchild Semiconductor Corporation
RFP45N06LE, RF1S45N06LESM Rev.
RFP45N06LE, RF1S45N06LESM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP45N06LE, RF1S45N06LESM Refer Peak Current Curve Refer Curve 0.95 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current (Note .IDM Pulsed Avalanche Rating Power Dissipation Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS TO-220, TO-263 48V, 45A, 1.07 (Figures TEST CONDITIONS 250µA, (Figure VDS, 250µA (Figure 55V, 50V, 150oC ±10V 45A, (Figure 30V, 45A, 0.67, (Figures 2150 0.028 1.05 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Diode Reverse Recovery Time NOTES: Pulse test: pulse width 80µs, duty cycle Repetitive rating: pulse width limited junction temperature. Transient Thermal Impedance curve (Figure SYMBOL 45A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2002 Fairchild Semiconductor Corporation
RFP45N06LE, RF1S45N06LESM Rev.
RFP45N06LE, RF1S45N06LESM Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
0.05 0.02 0.01 SINGLE PULSE NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 10-1 RECTANGULAR PULSE DURATION
ZJC, NORMALIZED THERMAL IMPEDANCE
0.01 10-5
10-4
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
IDM, PEAK CURRENT CAPABILITY
25oC RATED
25oC
DRAIN CURRENT
100µs
10ms OPERATION THIS AREA LIMITED rDS(ON) VDS, DRAIN SOURCE VOLTAGE
THERMAL IMPEDANCE LIMIT CURRENT THIS REGION
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
10-5
10-4
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFP45N06LE, RF1S45N06LESM Rev.
RFP45N06LE, RF1S45N06LESM Typical Performance Curves
IAS, AVALANCHE CURRENT DRAIN CURRENT
Unless Otherwise Specified (Continued)
STARTING 25oC STARTING 150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) tAV, TIME AVALANCHE (ms)
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 3.5V
2.5V
0.01
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Fairchild Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% -55oC 25oC rDS(ON), DRAIN SOURCE
RESISTANCE 11.25A 22.5A PULSE DURATION 80µs DUTY CYCLE 0.5%
175oC
VGS, GATE SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
30V, 45A, 0.67 SWITCHING TIME (ns) td(OFF) RGS, GATE SOURCE RESISTANCE td(ON) NORMALIZED RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFP45N06LE, RF1S45N06LESM Rev.
RFP45N06LE, RF1S45N06LESM Typical Performance Curves
Unless Otherwise Specified (Continued)
250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
VDS, 250µA
NORMALIZED GATE THRESHOLD VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
3000
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
DRAIN SOURCE VOLTAGE BVDSS IG(REF) 1.3mA PLATEAU VOLTAGES DESCENDING ORDER: BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS TIME (µs) 2.50 BVDSS 3.75 5.00 GATE SOURCE VOLTAGE
2500 CAPACITANCE (pF) CISS 2000 1500 1000 COSS CRSS VDS, DRAIN SOURCE VOLTAGE 1MHz CISS CRSS COSS
1.25
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP45N06LE, RF1S45N06LESM Rev.
RFP45N06LE, RF1S45N06LESM Test Circuits Waveforms
(Continued)
tOFF td(OFF)
td(ON)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Qg(10) Qg(5)
Qg(TOT)
DEVICES DEVICES
Ig(REF)
DEVICES Qg(TH)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP45N06LE, RF1S45N06LESM Rev.
RFP45N06LE, RF1S45N06LESM PSPICE Electrical Model
SUBCKT 45N06LE
3.73e-9 3.73e-9 2.08e-9 DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD
10/25/95
LDRAIN DPLCAP RLDRAIN DBREAK EBREAK DRAIN RSLC1 ESLC
RSLC2
LGATE GATE RLGATE EVTEMP RGATE EVTHRES
LDRAIN 4.0e-9 LGATE 6.0e-9 LSOURCE 3.0e-9 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD RBREAK RBREAKMOD RDRAIN RDRAINMOD 3.75e-3 RGATE RLDRAIN RLGATE RLSOURCE RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 6.15e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
MSTRO LSOURCE RSOURCE RLSOURCE SOURCE
VBAT ESLC .MODEL DBODYMOD 1.70e-12 3.20e-3 TRS1 1.75e-3 TRS2 1.75e-6 2.55e-9 7.00e-8 0.47) .MODEL DBREAKMOD 1.70e-1 TRS1 2.00e-3 TRS2 8.00e-7) .MODEL DPLCAPMOD (CJO 2.00e-9 1e-30 0.83 .MODEL MMEDMOD NMOS (VTO 2.00 1e-30 1.0) .MODEL MSTROMOD NMOS (VTO 2.42 1e-30 .MODEL MWEAKMOD NMOS (VTO 1.60 0.01 1e-30 10.0 0.1) .MODEL RBREAKMOD (TC1 1.13e-3 .MODEL RDRAINMOD (TC1 1.20e-2 6.00e-5) .MODEL RSLCMOD (TC1 2.00e-3 1.00e-6) .MODEL RSOURCEMOD (TC1 2.00e-3 =-1.00e-5) .MODEL RVTHRESMOD (TC1 -2.50e-3 -8.50e-6) .MODEL RVTEMPMOD (TC1 -2.00e-3 5.00e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2BMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -5.3 VOFF= -2.5) -2.5 VOFF= -5.3) -1.4 VOFF= 0.5) VOFF= -1.4)
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
EBREAK 66.5 EVTHRES EVTEMP
RDRAIN
DBODY
MWEAK MMED
RBREAK RVTEMP
VBAT
RVTHRES
RFP45N06LE, RF1S45N06LESM Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

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