200V, 3.500 Ohm, N-Channel Power MOSFET These N-Channel enhanceme

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200V, 3.500 Ohm, N-Channel Power MOSFET These N-Channel enhanceme

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RFP2N20
200V, 3.500 Ohm, N-Channel Power MOSFET
These N-Channel enhancement mode silicon gate power field effect transistors designed applications such switching regulators, switching converters, motor drivers, relay drivers drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA09289.
Features
200V rDS(ON) 3.500
Symbol
Ordering Information
PART NUMBER RFP2N20 PACKAGE TO-220AB BRAND RFP2N20
NOTE: When ordering, include entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP2N20 Rev.
RFP2N20
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP2N20 Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note .VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg UNITS
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC. 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA, (Figure Rated BVDSS Rated BVDSS, 125oC Gate Source Leakage Current Drain Source Resistance (Note Drain Source Voltage (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction Case IGSS rDS(ON) VDS(ON) td(ON) td(OFF) CISS COSS CRSS 1MHz, (Figure ±20V, 10V, (Figures 100V, 10V, 96.5 (Figure ±100 3.500
oC/W
Electrical Specifications
PARAMETER
UNITS
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulsed test: width 300µs duty cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL dlSD/dt 50A/µs TEST CONDITIONS UNITS
©2002 Fairchild Semiconductor Corporation
RFP2N20 Rev.
RFP2N20 Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
CASE TEMPERATURE (oC) DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
RATED SINGLE PULSE 25oC DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
DRAIN CURRENT
OPERATION THIS AREA LIMITED rDS(ON) 0.10
0.01
1000
VDS, DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
25oC VGS, GATE SOURCE VOLTAGE 125oC -40oC DRAIN CURRENT rDS(ON), DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC -40oC 125oC 25oC -40oC PULSE DURATION 80µs DUTY CYCLE 0.5% 125oC
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
©2002 Fairchild Semiconductor Corporation
RFP2N20 Rev.
RFP2N20 Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
VDS, DRAIN SOURCE VOLTAGE BVDSS GATE SOURCE VOLTAGE 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS IG(REF) 0.09µA DRAIN SOURCE VOLTAGE G(REF) IG(ACT) G(REF) IG(ACT) BVDSS VGS, GATE SOURCE VOLTAGE
CAPACITANCE (pF) 1MHz CISS CRSS COSS
CISS
COSS CRSS VDS, DRAIN SOURCE VOLTAGE
TIME (µs)
NOTE: Refer Fairchild Applications Notes AN7254 AN7260 FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP2N20 Rev.
RFP2N20 Test Circuits Waveforms
(ISOLATED SUPPLY) SAME TYPE 0.3µF Qg(TOT)
CURRENT REGULATOR
BATTERY
0.2µF
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP2N20 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

200V, 3.500 Ohm, N-Channel Power MOSFET These N-Channel enhanceme

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