25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET RFP25N05

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25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET RFP25N05

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RFP25N05L
25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET
RFP25N05L N-Channel logic level power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those integrated circuits gives optimum utilization silicon, resulting outstanding performance. RFP25N05L designed with logic level (5V) driving sources applications such programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers emitter switches bipolar transistors. This performance accomplished through special gate oxide design which provides full rated conductance gate biases range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
Features
25A, rDS(ON) 0.047 Rating Curve (Single Pulse) Design Optimized Gate Drives Driven Directly from CMOS, NMOS, Circuits Compatible with Automotive Drive Requirements Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP25N05L NOTE: PACKAGE TO-220AB BRAND RFP25N05L
Symbol
When ordering, include entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP25N05L Rev.
RFP25N05L
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP25N05L Refer Curve 0.48 UNITS W/oC
Drain Source Voltage (Note Drain Gate Voltage (RGS 20k) (Note .VDGR Continuous Drain Current Pulsed Drain Current (Note Single Pulse Avalanche Energy Rating (See Figures 16). Gate Source Voltage Maximum Power Dissipation Linear Derating Factor above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IGSS IDSS TEST CONDITIONS 250µA (Figure VDS, 250µA (Figure ±10V, 40V, 150oC (Figures 40V, 25A, (Figures ±100 0.047 0.056 2.083 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current
Drain Source Resistance (Note
rDS(ON)
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge (Gate Source Gate Drain) Gate Charge Threshold Gate Charge Thermal Resistance Junction Case Thermal Resistance Junction Ambient
t(ON) td(ON) td(OFF) t(OFF) Qg(TOT) Qg(5) Qg(TH)
25V, =12.5A (Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Diode Reverse Recovery Time NOTES: Pulse Test: Pulse width 80µs, duty cycle Repetitive Rating: Pulse width limited junction temperature. SYMBOL 25A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2002 Fairchild Semiconductor Corporation
RFP25N05L Rev.
RFP25N05L Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
Unless Otherwise Specified
CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
CONTINUOUS DRAIN CURRENT OPERATION THIS AREA LIMITED rDS(ON)
RATED, 25oC IAS, AVALANCHE CURRENT
STARTING 25oC STARTING 150oC
(L)(IAS)/(1.3 RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3 RATED BVDSS VDD) 0.01 0.10 tAV, TIME AVALANCHE (ms)
VDSS (MAX) VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE UNCLAMPED INDUCTIVE SWITCHING (SINGLE PULSE SOA)
IDS, DRAIN SOURCE CURRENT
5.0V
25oC 4.0V
IDS(ON), DRAIN SOURCE CURRENT
VGS, GATE SOURCE VOLTAGE PULSE DURATION 80µs DUTY CYCLE 0.5%
PULSE DURATION 80µs DUTY CYCLE 0.5%
3.0V
2.0V VDS, DRAIN SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
RFP25N05L Rev.
RFP25N05L Typical Performance Curves
PULSE DURATION 80µs DUTY CYCLE 0.5% VGS, GATE SOURCE VOLTAGE
Unless Otherwise Specified (Continued)
NORMALIZED DRAIN SOURCE RESISTANCE
NORMALIZED DRAIN SOURCE RESISTANCE
25A, PULSE DURATION 80µs DUTY CYCLE 0.5%
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
NORMALIZED GATE THRESHOLD VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD JUNCTION TEMPERATURE
2000 1MHz CISS CRSS COSS
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
GATE SOURCE VOLTAGE IG(REF) 0.60mA PLATEAU VOLTAGES DESCENDING ORDER: BVDSS 0.75 BVDSS 0.50 BVDSS BVDSS 0.25 BVDSS GATE SOURCE VOLTAGE
1600 CAPACITANCE (pF)
DRAIN SOURCE VOLTAGE
37.5
1200 CISS
12.5 DRAIN SOURCE VOLTAGE TIME (µs)
COSS CRSS
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Fairchild Application Notes AN7254 AN7260 FIGURE CAPACITANCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
©2002 Fairchild Semiconductor Corporation
RFP25N05L Rev.
RFP25N05L Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tOFF td(OFF)
td(ON)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
(ISOLATED SUPPLY)
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
SAME TYPE Qg(TOT)
BATTERY
0.2µF
0.3µF
Ig(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP25N05L Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET RFP25N05

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