SuperSOTTM-8 N-Channel enhancement mode power field effect transistors

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SuperSOTTM-8 N-Channel enhancement mode power field effect transistors

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NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor
SuperSOTTM-8 N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance. These devices particularly suited voltage applications such notebook computer power management, other battery powered circuits where fast switching, in-line power loss needed very small outline surface mount package.
Features
RDS(ON) 0.035 RDS(ON) 0.045 Proprietary SuperSOTTM-8 package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings 25°C unless otherwise noted
Symbol VDSS VGSS TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note
NDH8303N
Units
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note
°C/W °C/W
(Note
1997 Fairchild Semiconductor Corporation
NDH8303N Rev.C
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units
CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55oC Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, 125oC Static Drain-Source On-Resistance 125oC ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 0.45 0.029 0.043 0.036 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.035 0.063 0.045
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN 19.6
NDH8303N Rev.C
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions 0.67
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 0.67 0.65
JA(t
J-TA JC+RCA(t
Typical single device operation using board layout shown below 4.5"x5" FR-4 still environment: 156oC/W when mounted 0.0025 copper.
Scale letter size paper. Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8303N Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
4.5V
DRAIN-SOURCE ON-RESISTANCE
DS(on), NORMALIZED
2.0V
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
3.8A 4.5V
DS(on), NORMALIZED
125°C
DS(ON) NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
125°C
GATE-SOURCE THRESHOLD VOLTAGE
-55°C 25°C
250µA
GATE SOURCE VOLTAGE
NORMALIZED
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH8303N Rev.C
Typical Electrical Characteristics
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
REVERSE DRAIN CURRENT
125°C 25°C -55°C
NORMALIZED
1.05
0.95
JUNCTION TEMPERATURE (°C)
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
2500 2000 GATE-SOURCE VOLTAGE 1500 1000 CAPACITANCE (pF)
3.8A
Ciss
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
VOUT
INVERTED
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH8303N Rev.C
Typical Electrical Thermal Characteristics
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
DRAIN CURRENT
125°C
4.5V SINGLE PULSE
0.03
Note
25°C
DRAIN CURRENT
0.01
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
0.05 0.02
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Single Pulse
0.01
0.01
Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note1. Transient thermal response will change depending circuit board design.
NDH8303N Rev.C
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors

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