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Werte Maximum rated values Elektrische Eigenschaften Electrical p
Top Searches for this datasheetWerte Maximum rated values Elektrische Eigenschaften Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral Diode value, Diode insulation test voltage 80°C VCES IC,nom. ICRM 1.700 TC=25°C, Transistor Ptot 1660 VGES IFRM 10ms, 125°C 16.800 RMS, min. VISOL Charakteristische Werte Characteristic values Transistor Transistor Kollektor-Emitter collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge input capacitance reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current 300A, 15V, 25°C 300A, 15V, 125°C 12mA, VGE, 25°C VGE(th) min. typ. max. 2,45 -15V +15V 1MHz,Tvj 25°C,VCE 25V, Cies 1MHz,Tvj 25°C,VCE 25V, 1700V, 25°C 1700V, 125°C Cres ICES Gate-Emitter Reststrom gate-emitter leakage current 20V, 25°C IGES prepared Regine Mallwitz approved Christoph date publication: 1.3.2002 revision: FS300R17KE3_V1.xls Charakteristische Werte Characteristic values Transistor Transistor (ind. Last) turn delay time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Anstiegszeit (induktive Last) rise time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C (ind. Last) turn delay time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Fallzeit (induktive Last) fall time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Einschaltverlustenergie Puls turn-on energy loss pulse Abschaltverlustenergie Puls turn-off energy loss pulse Data stray inductance module Modulleitungswiderstand, Chip module lead resistance, terminals chip Zweig 300A, 900V, 4,7W, 125°C, 80nH 300A, 900V, 4,7W, 125°C, 80nH 10µsec, VCC=1000V, VCEmax=VCES -LsCE LsCE 1110 Eoff td,off td,on min. typ. max. Charakteristische Werte Characteristic values Diode Diode forward voltage peak reverse recovery current 300A, 25°C 300A, 125°C 300A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C recovered charge 300A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C Abschaltenergie Puls reverse recovery energy 300A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C Erec min. typ. max. t.b.d. FS300R17KE3_V1.xls Thermische Eigenschaften Thermal properties min. Innerer thermal resistance, junction case thermal resistance, case heatsink Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor transistor, Diode/Diode, Modul module lPaste W/m*K lgrease W/m*K RthCK RthJC typ. 0,005 max. 0,075 0,13 Tstg Mechanische Eigenschaften Mechanical properties siehe Anlage case, appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance comperative tracking index Anzugsdrehmoment mech. Befestigung mounting torque Anzugsdrehmoment elektr. terminal connection torque Gewicht weight terminals Al2O3 dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes. FS300R17KE3_V1.xls Ausgangskennlinie (typisch) Output characteristic (typical) (VCE) VCEsat, 25°C VCEsat, 125°C Ausgangskennlinienfeld (typisch) Output characteristic (typical) VGE=9V VGE=11V VGE=13V VGE=15V VGE=19V (VCE) 125°C FS300R17KE3_V1.xls (typisch) Transfer characteristic (typical) (VGE) 25°C 125°C Inversdiode (typisch) Forward characteristic inverse diode (typical) 25°C 125°C (VF) FS300R17KE3_V1.xls Schaltverluste (typisch) (IC) (IC) (IC) Rgon Rgoff =4,79, 900V, 125°C Switching losses (typical) [mJ] Eoff Erec Schaltverluste (typisch) Switching losses (typical) [mJ] Eoff Erec (RG) (RG) (RG) 300A 900V 125°C FS300R17KE3_V1.xls Transienter Transient thermal impedance thJC ZthJC 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 [sec] [K/kW] IGBT [sec] IGBT [K/kW] Diode [sec] Diode 19,09 0,01565 44,06 0,02103 28,21 0,03977 48,89 0,03011 21,78 0,07521 30,96 0,08672 5,924 1,443 1,1583 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) IC,Chip Ohm, Tvj= 125°C 1000 1200 1400 1600 1800 FS300R17KE3_V1.xls FS300R17KE3_V1.xls Other recent searchesSL32-A - SL32-A SL32-A Datasheet SL34-A - SL34-A SL34-A Datasheet RLP-EDU1267 - RLP-EDU1267 RLP-EDU1267 Datasheet MAC8SD - MAC8SD MAC8SD Datasheet MAC8SM - MAC8SM MAC8SM Datasheet MAC8SN - MAC8SN MAC8SN Datasheet LP38853S-ADJ - LP38853S-ADJ LP38853S-ADJ Datasheet JC030-Series - JC030-Series JC030-Series Datasheet FDR4420A - FDR4420A FDR4420A Datasheet BFR35AP - BFR35AP BFR35AP Datasheet
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